US Patent Application 18333981. TRANSISTOR GATE STRUCTURES AND METHODS OF FORMING THE SAME simplified abstract
Contents
TRANSISTOR GATE STRUCTURES AND METHODS OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
TRANSISTOR GATE STRUCTURES AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18333981 Titled 'TRANSISTOR GATE STRUCTURES AND METHODS OF FORMING THE SAME'
Simplified Explanation
The abstract describes a device that includes two nanostructures surrounded by a gate dielectric made of dielectric materials. The device also includes a gate electrode, which consists of a work function tuning layer made of a pure work function metal. This metal, along with the dielectric materials, fills the space between the two nanostructures. The work function tuning layer is covered by an adhesion layer, and on top of that is a fill layer.
Original Abstract Submitted
In an embodiment, a device includes: a first nanostructure; a second nanostructure; a gate dielectric around the first nanostructure and the second nanostructure, the gate dielectric including dielectric materials; and a gate electrode including: a work function tuning layer on the gate dielectric, the work function tuning layer including a pure work function metal, the pure work function metal of the work function tuning layer and the dielectric materials of the gate dielectric completely filling a region between the first nanostructure and the second nanostructure, the pure work function metal having a composition of greater than 95 at. % metals; an adhesion layer on the work function tuning layer; and a fill layer on the adhesion layer.
