US Patent Application 18333145. MEMORY DEVICE WITH BOTTOM ELECTRODE simplified abstract
Contents
MEMORY DEVICE WITH BOTTOM ELECTRODE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Hsia-Wei Chen of Taipei City (TW)
Chih-Hung Pan of Taichung City (TW)
Chih-Hsiang Chang of Taichung City (TW)
Yu-Wen Liao of New Taipei City (TW)
Wen-Ting Chu of Kaohsiung City (TW)
MEMORY DEVICE WITH BOTTOM ELECTRODE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18333145 Titled 'MEMORY DEVICE WITH BOTTOM ELECTRODE'
Simplified Explanation
This abstract describes a memory device that consists of several components. It starts with a bottom electrode, followed by a buffer element, a metal-containing oxide portion, a resistance switch element, and finally a top electrode. The buffer element is located above the bottom electrode, while the metal-containing oxide portion is on top of the buffer element. Importantly, the metal-containing oxide portion and the buffer element are made of the same metal material. The resistance switch element is then placed over the metal-containing oxide portion, and the top electrode is the final layer on top of the resistance switch element.
Original Abstract Submitted
A memory device includes a bottom electrode, a buffer element, a metal-containing oxide portion, a resistance switch element, and a top electrode. The buffer element is over the bottom electrode. The metal-containing oxide portion is over the buffer element, in which the metal-containing oxide portion has a same metal material as that of the buffer element. The resistance switch element is over the metal-containing oxide portion. The top electrode is over the resistance switch element.
