US Patent Application 18332972. ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract

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ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME

Inventors

Jinseong Heo of Seoul (KR)


Yunseong Lee of Osan-si (KR)


Sanghyun Jo of Seoul (KR)


ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract

  • This abstract for appeared for patent application number 18332972 Titled 'ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME'

Simplified Explanation

The abstract describes an electronic device and a method of manufacturing it. The device has two regions on a substrate, each containing a different device. The first device has a layer with a ferroelectric domain and a gate electrode, while the second device has a different layer with a ferroelectric domain and a gate electrode. These two layers have different characteristics when it comes to polarization change caused by an electric field. The first layer exhibits a non-hysteretic behavior, meaning it does not retain any memory of the electric field, while the second layer exhibits a hysteretic behavior, meaning it retains memory of the electric field.


Original Abstract Submitted

Provided are an electronic device and a method of manufacturing the same. The electronic device may include a first device provided on a first region of a substrate; and a second device provided on a second region of the substrate, wherein the first device may include a first domain layer including a ferroelectric domain and a first gate electrode on the first domain layer, and the second device may include a second domain layer including a ferroelectric domain and a second gate electrode on the second domain layer. The first domain layer and the second domain layer may have different characteristics from each other at a polarization change according to an electric field. At the polarization change according to the electric field, the first domain layer may have substantially a non-hysteretic behavior characteristic and the second domain layer may have a hysteretic behavior characteristic.