US Patent Application 18332936. Finfet With Dummy Fins And Methods Of Making The Same simplified abstract
Contents
Finfet With Dummy Fins And Methods Of Making The Same
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chun-Hao Hsu of New Taipei City (TW)
Yu-Chang Liang of Kaohsiung City (TW)
Kao-Ting Lai of Hsinchu City (TW)
Finfet With Dummy Fins And Methods Of Making The Same - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18332936 Titled 'Finfet With Dummy Fins And Methods Of Making The Same'
Simplified Explanation
This abstract describes a semiconductor structure that consists of a semiconductor fin and a dielectric fin. The semiconductor fin is a protrusion from a substrate and is oriented in one direction. The dielectric fin is placed over the substrate and is oriented in a direction perpendicular to the semiconductor fin. The dielectric fin acts as a sidewall for the semiconductor fin. It is made up of two layers, with the first layer being different in composition from the second layer. Lastly, there is a metal gate stack placed over the semiconductor fin, also oriented in the same direction as the dielectric fin.
Original Abstract Submitted
A semiconductor structure includes a semiconductor fin protruding from a substrate and oriented lengthwise along a first direction, a dielectric fin disposed over the substrate and oriented lengthwise along a second direction perpendicular to the first direction, where the dielectric fin defines a sidewall of the semiconductor fin along the second direction and where the dielectric fin includes a first dielectric layer disposed over a second dielectric layer that differs from the first dielectric layer in composition, and a metal gate stack disposed over the semiconductor fin and oriented lengthwise along the second direction.
