US Patent Application 18329396. INTERFACE TRAP CHARGE DENSITY REDUCTION simplified abstract
Contents
INTERFACE TRAP CHARGE DENSITY REDUCTION
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Szu-Chi Yang of Hsinchu City (TW)
Allen Chien of Hsinchu County (TW)
Chien-Chih Lin of Taichung City (TW)
Po-Kai Hsiao of Changhua County (TW)
Chien-Chih Lee of New Taipei City (TW)
Chih Chieh Yeh of Taipei City (TW)
Cheng-Ting Ding of Taipei City (TW)
Tsung-Hung Lee of Hsinchu City (TW)
INTERFACE TRAP CHARGE DENSITY REDUCTION - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18329396 Titled 'INTERFACE TRAP CHARGE DENSITY REDUCTION'
Simplified Explanation
The abstract describes a method for manufacturing a semiconductor device. The method involves creating two fins on a substrate using different semiconductor materials, then applying a semiconductor cap layer over the fins. Finally, the cap layer is heated at a specific temperature while some parts of it are exposed.
Original Abstract Submitted
The present disclosure provides methods of fabricating a semiconductor device. A method according to one embodiment includes forming, on a substrate, a first fin formed of a first semiconductor material and a second fin formed of a second semiconductor material different from the first semiconductor material, forming a semiconductor cap layer over the first fin and the second fin, and annealing the semiconductor cap layer at a first temperature while at least a portion of the semiconductor cap layer is exposed.
