US Patent Application 18329126. METHOD FOR FORMING SOURCE/DRAIN CONTACTS UTILIZING AN INHIBITOR simplified abstract
Contents
METHOD FOR FORMING SOURCE/DRAIN CONTACTS UTILIZING AN INHIBITOR
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Li-Zhen Yu of New Taipei City (TW)
Chia-Hao Chang of Hsinchu City (TW)
Cheng-Chi Chuang of New Taipei City (TW)
Yu-Ming Lin of Hsinchu City (TW)
Chih-Hao Wang of Hsinchu County (TW)
METHOD FOR FORMING SOURCE/DRAIN CONTACTS UTILIZING AN INHIBITOR - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18329126 Titled 'METHOD FOR FORMING SOURCE/DRAIN CONTACTS UTILIZING AN INHIBITOR'
Simplified Explanation
This abstract describes a device that includes various components such as a substrate, isolation structure, gate structure, gate spacer, source/drain region, silicide layer, and dielectric liner. These components are arranged in a specific way, with the dielectric liner positioned above the silicide layer but spaced away from it. The arrangement is described in relation to a cross-sectional plane perpendicular to the lengthwise direction of the gate structure.
Original Abstract Submitted
A device includes a substrate, an isolation structure over the substrate, a gate structure over the isolation structure, a gate spacer on a sidewall of the gate structure, a source/drain (S/D) region adjacent to the gate spacer, a silicide on the S/D region, a dielectric liner over a sidewall of the gate spacer and on a top surface of the isolation structure, wherein a bottom surface of the dielectric liner is above a top surface of the silicide layer and spaced away from the top surface of the silicide layer in a cross-sectional plane perpendicular to a lengthwise direction of the gate structure.
