US Patent Application 18326682. SEMICONDUCTOR DEVICE WITH CONFORMAL SOURCE/DRAIN LAYER simplified abstract
Contents
SEMICONDUCTOR DEVICE WITH CONFORMAL SOURCE/DRAIN LAYER
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Yao-Sheng Huang of Kaohsiung City (TW)
Hung-Chang Sun of Kaohsiung City (TW)
I-Ming Chang of Hsinchu City (TW)
Zi-Wei Fang of Hsinchu County (TW)
SEMICONDUCTOR DEVICE WITH CONFORMAL SOURCE/DRAIN LAYER - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18326682 Titled 'SEMICONDUCTOR DEVICE WITH CONFORMAL SOURCE/DRAIN LAYER'
Simplified Explanation
This abstract describes a semiconductor device that consists of several components. These components include a semiconductor fin, a gate structure, a doped semiconductor layer, and a dielectric structure. The semiconductor fin has two parts - a top portion and a lower portion that extends from the top portion to a substrate. The gate structure spans across the semiconductor fin. The doped semiconductor layer is in contact with the top portion of the semiconductor fin. When looking at a cross-section of the device, the doped semiconductor layer has a shape that matches the shape of the top portion of the semiconductor fin.
Original Abstract Submitted
A semiconductor device includes a semiconductor fin, a gate structure, a doped semiconductor layer, and a dielectric structure. The semiconductor fin has a top portion and a lower portion extending from the top portion to a substrate. The gate structure extends across the semiconductor fin. The doped semiconductor layer interfaces the top portion of the semiconductor fin. In a cross-section taken along a lengthwise direction of the gate structure, the doped semiconductor layer has an outer profile conformal to a profile of the top portion of the semiconductor fin.
