US Patent Application 18326370. Low-k Feature Formation Processes and Structures Formed Thereby simplified abstract
Contents
Low-k Feature Formation Processes and Structures Formed Thereby
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Wan-Yi Kao of Baoshan Township (TW)
Li Chun Te of Renwu Township (TW)
Hsiang-Wei Lin of New Taipei City (TW)
Te-En Cheng of Taoyuan City (TW)
Wei-Ken Lin of Tainan City (TW)
Shu Ling Liao of Taichung City (TW)
Low-k Feature Formation Processes and Structures Formed Thereby - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18326370 Titled 'Low-k Feature Formation Processes and Structures Formed Thereby'
Simplified Explanation
The abstract describes semiconductor device structures with low-k features, which refers to features that have a low dielectric constant. The abstract mentions different examples of low-k features, such as a surface modification layer, gate spacers, and a contact etch stop layer. These features are designed to protect low-k features during processing. The abstract also mentions that methods for forming these low-k features are described. Overall, the abstract provides a brief overview of the topic without overselling any specific claims or providing a title.
Original Abstract Submitted
Semiconductor device structures having low-k features and methods of forming low-k features are described herein. Some examples relate to a surface modification layer, which may protect a low-k feature during subsequent processing. Some examples relate to gate spacers that include a low-k feature. Some examples relate to a low-k contact etch stop layer. Example methods are described for forming such
