US Patent Application 18324192. MANUFACTURING METHOD OF DISPLAY DEVICE AND CVD DEVICE simplified abstract
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MANUFACTURING METHOD OF DISPLAY DEVICE AND CVD DEVICE
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MANUFACTURING METHOD OF DISPLAY DEVICE AND CVD DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18324192 titled 'MANUFACTURING METHOD OF DISPLAY DEVICE AND CVD DEVICE
Simplified Explanation
- The patent application describes a manufacturing method for a display device. - The method involves forming a sealing layer using a deposition process and an etching process. - The deposition process includes introducing a material gas into a chamber and depositing silicon nitride on a processing substrate. - After the deposition process, the material gas is stopped and the residual gas inside the chamber is evacuated. - The etching process involves introducing a cleaning gas into the chamber through the same route as the material gas. - Anisotropic dry etching is performed to remove part of the silicon nitride deposited on the processing substrate. - The residual gas inside the chamber is then evacuated. - The combination of the deposition process and the etching process is performed at least twice.
Original Abstract Submitted
According to one embodiment, a manufacturing method of a display device includes forming a sealing layer. The forming the sealing layer includes a deposition process of introducing a material gas into a chamber, depositing silicon nitride on a processing substrate, stopping introduction of the material gas and evacuating a residual gas of inside of the chamber, and an etching process of introducing a cleaning gas into the chamber through a same route as the material gas, performing anisotropic dry etching for removing part of the silicon nitride deposited on the processing substrate, and evacuating a residual gas of the inside of the chamber. A combination of the deposition process and the etching process is performed at least twice.
