US Patent Application 18321196. SOT-MRAM WITH SHARED SELECTOR simplified abstract
Contents
SOT-MRAM WITH SHARED SELECTOR
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Shy-Jay Lin of Jhudong Township (TW)
William Joseph Gallagher of Ardsley NY (US)
SOT-MRAM WITH SHARED SELECTOR - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18321196 Titled 'SOT-MRAM WITH SHARED SELECTOR'
Simplified Explanation
The abstract describes a magnetic memory device that consists of several components. These include a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring placed over the MTJ stack, a first terminal connected to one end of the SOT induction wiring, a second terminal connected to the other end of the SOT induction wiring, and a shared selector layer connected to the first terminal.
Original Abstract Submitted
A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.
