US Patent Application 18306341. NITRIDE SEMICONDUCTOR BUFFER STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract
NITRIDE SEMICONDUCTOR BUFFER STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
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NITRIDE SEMICONDUCTOR BUFFER STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18306341 Titled 'NITRIDE SEMICONDUCTOR BUFFER STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME'
Simplified Explanation
The abstract describes a nitride semiconductor buffer structure and a semiconductor device that uses this structure. The buffer structure consists of multiple layers placed between a substrate and an active layer. The active layer is made of a nitride semiconductor. The buffer layers are stacked on top of each other on the substrate and each layer has a super lattice structure. They are made of a doped nitride semiconductor and have different compositions and doping concentrations from each other.
Original Abstract Submitted
Provided are a nitride semiconductor buffer structure and a semiconductor device including the same. The buffer structure may include a plurality of buffer layers between a substrate and an active layer. The active layer may include a nitride semiconductor. The plurality of buffer layers may be stacked on each other on the substrate. Each of the plurality of buffer layers may have a super lattice structure and may include a doped nitride semiconductor. The plurality of buffer layers may have different compositions from each other. Adjacent buffer layers, among the plurality of buffer layers, may have different doping concentrations from each other.
