US Patent Application 18305778. MONOLITHIC INTEGRATION OF DIFFERENT LIGHT EMITTING STRUCTURES ON A SAME SUBSTRATE simplified abstract
MONOLITHIC INTEGRATION OF DIFFERENT LIGHT EMITTING STRUCTURES ON A SAME SUBSTRATE
Organization Name
Inventor(s)
Sheila K. Hurtt of Palo Alto CA (US)
MONOLITHIC INTEGRATION OF DIFFERENT LIGHT EMITTING STRUCTURES ON A SAME SUBSTRATE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18305778 titled 'MONOLITHIC INTEGRATION OF DIFFERENT LIGHT EMITTING STRUCTURES ON A SAME SUBSTRATE
Simplified Explanation
- The patent application describes a method of integrating different light emitting structures on the same substrate. - The device for light generation includes a substrate with buffer layers made of GaN material. - Light emitting structures are grown on the top buffer layer, with each structure generating a different color of light. - A p-doped layer made of GaN material is placed over the active area of each light emitting structure. - The device can be used in a light field display and connected to a backplane.
Original Abstract Submitted
The disclosure describes various aspects of monolithic integration of different light emitting structures on a same substrate. In an aspect, a device for light generation is described having a substrate with one or more buffer layers made a material that includes GaN. The device also includes light emitting structures, which are epitaxially grown on a same surface of a top buffer layer of the substrate, where each light emitting structure has an active area parallel to the surface and laterally terminated, and where the active area of different light emitting structures is configured to directly generate a different color of light. The device also includes a p-doped layer disposed over the active area of each light emitting structure and made of a p-doped material that includes GaN. The device may be part of a light field display and may be connected to a backplane of the light field display.
