US Patent Application 18304930. SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kyeongock Chong of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18304930 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device with various components and structures.
- The device includes an active region, an isolation region, and a gate trench.
- A gate structure is present in the gate trench.
- There are two impurity regions on both sides of the gate structure.
- A bit line structure is included, consisting of a line portion and a plug portion.
- The plug portion is electrically connected to one of the impurity regions.
- An insulating structure is present on the side surface of the plug portion.
- The insulating structure includes a spacer, an insulating pattern, and an insulating liner.
- The spacer is made of a first material, the insulating pattern is made of a second material, and the insulating liner is made of a third material.
Original Abstract Submitted
A semiconductor device includes an active region; an isolation region on a side surface of the active region; a gate trench intersecting the active region and extending into the isolation region; a gate structure in the gate trench; a first impurity region and a second impurity region in the active region on both sides of the gate structure and spaced apart from each other; a bit line structure including a line portion intersecting the gate structure and a plug portion below the line portion and electrically connected to the first impurity region; and an insulating structure on a side surface of the plug portion. The insulating structure includes a spacer including a first material; an insulating pattern between the plug portion and the spacer and including a second material; and an insulating liner covering a side surface and a bottom surface of the insulating pattern and including a third material.
