US Patent Application 18304813. MEMORY SYSTEM FOR OPTIMIZING ON-DIE TERMINATION SETTINGS OF MULTI-RANKS, METHOD OF OPERATION OF MEMORY SYSTEM, AND MEMORY CONTROLLER simplified abstract

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MEMORY SYSTEM FOR OPTIMIZING ON-DIE TERMINATION SETTINGS OF MULTI-RANKS, METHOD OF OPERATION OF MEMORY SYSTEM, AND MEMORY CONTROLLER

Organization Name

Samsung Electronics Co., Ltd.


Inventor(s)

Youngdo Um of Suwon-si (KR)


Taeyoung Oh of Suwon-si (KR)


Hoseok Seol of Suwon-si (KR)


MEMORY SYSTEM FOR OPTIMIZING ON-DIE TERMINATION SETTINGS OF MULTI-RANKS, METHOD OF OPERATION OF MEMORY SYSTEM, AND MEMORY CONTROLLER - A simplified explanation of the abstract

  • This abstract for appeared for US patent application number 18304813 Titled 'MEMORY SYSTEM FOR OPTIMIZING ON-DIE TERMINATION SETTINGS OF MULTI-RANKS, METHOD OF OPERATION OF MEMORY SYSTEM, AND MEMORY CONTROLLER'

Simplified Explanation

The abstract describes a memory system that consists of a host system and a memory device. The memory controller in the host system controls read or write operations for multiple memory ranks based on target or non-target information. The memory device has a storage that stores on-die termination (ODT) information for the memory ranks. The memory controller determines a target rank to be read or written and sends this information to the memory device. The memory device compares the ODT information with the target or non-target information received from the memory controller and adjusts the ODT value of the target rank based on the result of the comparison.


Original Abstract Submitted

Provided is a memory system including a host system including a memory controller configured to control a read or write operation for a plurality of memory ranks, based on target or non-target information for the plurality of memory ranks, and a memory device including a storage configured to store on-die termination (ODT) information of the memory ranks. Here, the memory controller is further configured to determine a target rank to be read or written, and transmit information about the determined target rank, to the memory device, and the memory device is further configured to perform a comparison of the ODT information of the memory ranks stored in the storage with target or non-target information received from the memory controller, and change an ODT value of the target rank, based on target information received from the memory controller based on a result of the comparison.