US Patent Application 18303833. METHOD OF FABRICATING AN ELECTRODE STRUCTURE AND APPARATUS FOR FABRICATING THE ELECTRODE STRUCTURE simplified abstract

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METHOD OF FABRICATING AN ELECTRODE STRUCTURE AND APPARATUS FOR FABRICATING THE ELECTRODE STRUCTURE

Organization Name

Samsung Electronics Co., Ltd.


Inventor(s)

Dohyung Kim of Suwon-si (KR)

METHOD OF FABRICATING AN ELECTRODE STRUCTURE AND APPARATUS FOR FABRICATING THE ELECTRODE STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18303833 titled 'METHOD OF FABRICATING AN ELECTRODE STRUCTURE AND APPARATUS FOR FABRICATING THE ELECTRODE STRUCTURE

Simplified Explanation

The abstract describes a method for fabricating an electrode structure in a patent application. Here is a simplified explanation of the abstract:

  • The method involves several steps to create the electrode structure.
  • First, a first gate electrode is formed.
  • Then, an electrode capping layer on the first gate electrode is removed through a removal process.
  • Next, a second gate electrode is formed on top of the first gate electrode.
  • Finally, an upper portion of the second gate electrode is nitridated.

Bullet points to explain the patent/innovation:

  • The method provides a process for fabricating an electrode structure.
  • It involves the formation of two gate electrodes.
  • The removal process is used to remove an electrode capping layer on the first gate electrode.
  • The nitridation process is used to modify the upper portion of the second gate electrode.
  • This method may be used in various applications that require precise electrode structures.


Original Abstract Submitted

A method of fabricating an electrode structure may include forming a first gate electrode, performing a removal process on an electrode capping layer formed on the first gate electrode, forming a second gate electrode on the first gate electrode, and nitridating an upper portion of the second gate electrode.