US Patent Application 18301347. METHODS OF FABRICATING SAMPLE WAFERS simplified abstract

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METHODS OF FABRICATING SAMPLE WAFERS

Organization Name

Samsung Electronics Co., Ltd.


Inventor(s)

Hyungsuk Moon of Suwon-si (KR)


Seungkoo Shin of Pohang-si (KR)


Minjung Kim of Suwon-si (KR)


Sanghwang Park of Pohang-si (KR)


METHODS OF FABRICATING SAMPLE WAFERS - A simplified explanation of the abstract

  • This abstract for appeared for US patent application number 18301347 Titled 'METHODS OF FABRICATING SAMPLE WAFERS'

Simplified Explanation

The abstract describes a method for creating sample wafers. It involves placing silver particles on the wafer's surface, then growing nanowires on top of the wafer. Afterward, the silver particles are removed, and the dangling bond sites on the nanowires' surfaces are treated with deuterium to terminate them.


Original Abstract Submitted

A method of fabricating sample wafers includes forming silver particles on a surface of a wafer, forming nanowires on the wafer, removing the silver particles, and terminating dangling bond sites from surfaces of the nanowires with deuterium.