US Patent Application 18296511. SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18296511 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a semiconductor device that includes various active structures and dummy gate structures. Here are the key points to understand about the patent/innovation:
- The semiconductor device consists of a semiconductor layer with impurities of a certain conductivity type. - First active structures are present, extending upwards from the semiconductor layer and also containing the same conductivity-type impurities. - An epitaxial layer is incorporated within the semiconductor layer, which includes impurities of a different conductivity type. - Second active structures are formed, extending upwards from the epitaxial layer. These structures are positioned between the first active structures in a specific direction and contain the second conductivity-type impurities. - Third active structures are also present, extending upwards from the epitaxial layer. These structures are positioned between the second active structures in the same direction and contain the first conductivity-type impurities. - Dummy gate structures intersect the first and second active structures on the semiconductor layer. These structures extend in a different direction, perpendicular to the first direction.
In summary, the patent describes a semiconductor device with a specific arrangement of active structures and dummy gate structures, utilizing different conductivity-type impurities in different layers.
Original Abstract Submitted
A semiconductor device includes a semiconductor layer including first conductivity-type impurities; first active structures extending upwardly from the semiconductor layer and including the first conductivity-type impurities; an epitaxial layer in the semiconductor layer and including second conductivity-type impurities; second active structures extending upwardly from the epitaxial layer, between the first active structures in a first direction, and including the second conductivity-type impurities; third active structures extending upwardly from the epitaxial layer, between the second active structures in the first direction, and including the first conductivity-type impurities; and dummy gate structures intersecting the first and second active structures on the semiconductor layer, respectively, and extending in a second direction.
