US Patent Application 18249552. PLASMA PROCESSING APPARATUS simplified abstract
Contents
PLASMA PROCESSING APPARATUS
Organization Name
Inventor(s)
Taro Ikeda of Nirasaki City, Yamanashi (JP)
Satoru Kawakami of Nirasaki City, Yamanashi (JP)
PLASMA PROCESSING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18249552 titled 'PLASMA PROCESSING APPARATUS
Simplified Explanation
The patent application describes a plasma processing apparatus that uses electromagnetic waves to generate plasma within a chamber.
- The apparatus includes a waveguide structure that is designed to propagate VHF or UHF waves.
- The waveguide structure includes a resonator, which consists of a first waveguide, a second waveguide, and a load impedance portion.
- The first waveguide has a specific characteristic impedance, while the second waveguide has a higher characteristic impedance.
- The second waveguide is terminated at a short-circuit end with a ground potential.
- The load impedance portion is connected between the first and second waveguides.
- The higher characteristic impedance of the second waveguide allows for efficient generation of plasma within the chamber.
Original Abstract Submitted
Disclosed is a plasma processing apparatus including a chamber and a waveguide structure. The waveguide structure is configured to propagate electromagnetic waves, which are VHF waves or UHF waves, in order to generate plasma within the chamber. The waveguide structure includes a resonator for electromagnetic waves. The resonator includes a first waveguide, a second waveguide, and a load impedance portion. The first waveguide has a first characteristic impedance. The second waveguide has a second characteristic impedance. The second waveguide is terminated at a short-circuit end having a ground potential. The load impedance portion is connected between the first waveguide and the second waveguide. The second characteristic impedance is greater than the first characteristic impedance.
