US Patent Application 18248900. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract
Contents
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
Organization Name
Inventor(s)
Koji Kagawa of Koshi City, Kumamoto (JP)
Koukichi Hiroshiro of Koshi City, Kumamoto (JP)
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18248900 titled 'SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
Simplified Explanation
The patent application describes a method for processing a substrate with a SiO film and a Low-k film or a SiN film exposed on its surface. The method involves the following steps:
- The substrate is prepared with the SiO film and the Low-k film or SiN film exposed.
- The Low-k film or SiN film is exposed to oxygen plasma.
- An organic compound, specifically a self-assembled monolayer (SAM) material, is supplied to the surface of the substrate to form a protective film on the Low-k film or SiN film.
- Hydrofluoric acid is supplied to the surface of the substrate to etch the SiO film.
- The protective film inhibits the etching of the Low-k film or SiN film caused by the hydrofluoric acid.
This method allows for selective etching of the SiO film while protecting the Low-k film or SiN film, which can be useful in various substrate processing applications.
Original Abstract Submitted
A substrate processing method includes (A) to (C) described below. (A) A substrate having a surface in which a SiO film and a Low-k film or a SiN film are exposed is preprared. The Low-k film or the SiN film is exposed to oxygen plasma. (B) A protective film is formed on the Low-k film or the SiN film by supplying an organic compound (self-assembled monolayer (SAM) material) configured to form a SAM to the surface of the substrate. (C) The SiO film is etched by supplying hydrofluoric acid to the surface of the substrate while inhibiting etching of the Low-k film or the SiN film caused by the hydrofluoric acid with the protective film.
