US Patent Application 18246595. Semiconductor Light Receiving Element simplified abstract
Contents
Semiconductor Light Receiving Element
Organization Name
Nippon Telegraph and Telephone Corporation
Inventor(s)
Masahiro Nada of Musashino-shi, Tokyo (JP)
Yasuhiko Nakanishi of Musashino-shi, Tokyo (JP)
Shoko Tatsumi of Musashino-shi, Tokyo (JP)
Semiconductor Light Receiving Element - A simplified explanation of the abstract
This abstract first appeared for US patent application 18246595 titled 'Semiconductor Light Receiving Element
Simplified Explanation
- The patent application describes a structure that blocks light from reaching the peripheral part of an element and ensures that the light is incident to the center part of the element. - The structure is applied to the rear surface portion of the element. - The element in question is a semiconductor light receiving element. - The semiconductor light receiving element includes a semiconductor light-absorbing layer on the front surface of a semiconductor substrate. - The element receives signal light from the rear surface of the semiconductor substrate. - The transmittance of the inner region of the semiconductor light-absorbing layer, which has the same center as the operating region, is higher than that of the outside region. - This design ensures that the light is incident to the center part of the semiconductor light-absorbing layer without fail.
Original Abstract Submitted
A structure for blocking light incidence to a peripheral part of an element is applied to a rear surface portion, and when optically coupled to a light receiving element, the light is made incident to a center part of the element without fail. An embodiment relates to a semiconductor light receiving element, including a semiconductor light-absorbing layer on a front surface of a semiconductor substrate, for receiving signal light from a rear surface of the semiconductor substrate, and a transmittance of an inner region of a similar shape having a same center as an operating region defined in the semiconductor light-absorbing layer on the rear surface of the semiconductor substrate is higher than that of an outside of the shape.
