US Patent Application 18246280. NITRIDE SEMICONDUCTOR DEVICE simplified abstract
Contents
NITRIDE SEMICONDUCTOR DEVICE
Organization Name
Panasonic Intellectual Property Management Co., Ltd.
Inventor(s)
Manabu Yanagihara of Osaka (JP)
NITRIDE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18246280 titled 'NITRIDE SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a nitride semiconductor device with specific electrode configurations and a dielectric film.
- The device has a first active area surrounded by an isolation area.
- Above the first active area, there are electrodes including a source electrode, a first gate electrode, a second gate electrode, and at least one drain electrode.
- The source electrode is positioned between the first and second gate electrodes in a plan view.
- The drain electrode is located opposite to the source electrode relative to either the first or second gate electrode.
- Each electrode has a finger-shaped portion extending in a direction perpendicular to the plan view.
- A first dielectric film is placed above the source electrode.
- The first gate electrode and the second gate electrode are connected by a gate electrode joiner above the first dielectric film.
Original Abstract Submitted
A nitride semiconductor device includes: a first active area surrounded by an isolation area; and the following electrodes above the first active area: a source electrode; a first gate electrode and a second gate electrode, one on either side of and spaced from the source electrode in a first direction in plan view; and at least one drain electrode located in a direction opposite the source electrode relative to the first gate electrode or the second gate electrode. The source electrode, the first gate electrode, the second gate electrode, and the at least one drain electrode each include a finger-shaped portion extending in a second direction perpendicular to the first direction in the plan view. A first dielectric film is disposed above the source electrode. The first gate electrode and the second gate electrode are electrically connected by a gate electrode joiner disposed above the first dielectric film.
