US Patent Application 18245299. ELECTROMAGNETIC WAVE SHIELDING FILM, AND METHOD FOR MANUFACTURING SAME simplified abstract
Contents
ELECTROMAGNETIC WAVE SHIELDING FILM, AND METHOD FOR MANUFACTURING SAME
Organization Name
Inventor(s)
Sangyeon Pak of Gyeonggi-do (KR)
Taehun Kim of Gyeonggi-do (KR)
ELECTROMAGNETIC WAVE SHIELDING FILM, AND METHOD FOR MANUFACTURING SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18245299 titled 'ELECTROMAGNETIC WAVE SHIELDING FILM, AND METHOD FOR MANUFACTURING SAME
Simplified Explanation
- The patent application describes an electromagnetic wave shielding film that consists of a base substrate and an electromagnetic wave shielding layer. - The thickness of the electromagnetic wave shielding layer is specified to be between 1 nm and 50 nm. - The shielding layer is composed of three layers: a first layer, a second layer, and a third layer, all made of copper sulfide. - The method for manufacturing the electromagnetic wave shielding film involves depositing a metal layer on a base substrate and then sulfiding the metal layer. - The sulfiding process is carried out at a temperature ranging from 25°C to 200°C.
Original Abstract Submitted
An electromagnetic wave shielding film according to an embodiment comprises: a base substrate; and an electromagnetic wave shielding layer disposed on the base substrate, wherein the thickness of the electromagnetic wave shielding layer is 1 nm to 50 nm. In addition, the shielding layer comprises: a first layer on the base substrate; a second layer on the first layer; and a third layer on the second layer, wherein the first layer, the second layer, and the third layer include copper sulfide. A method for manufacturing an electromagnetic wave shielding film according to an embodiment comprises the steps of: depositing a metal layer on a base substrate; and sulfiding the metal layer, wherein the step of sulfiding the metal layer is carried out at a temperature of 25° C. to 200° C.
