US Patent Application 18233190. LIGHT EMITTING DIODE DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract

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LIGHT EMITTING DIODE DEVICE AND METHOD OF MANUFACTURING THE SAME

Organization Name

Samsung Display Co., LTD.==Inventor(s)==

[[Category:Su Bin Bae of Hwaseong-si (KR)]]

[[Category:Yu Gwang Jeong of Anyang-si (KR)]]

[[Category:Shin Il Choi of Hwaseong-si (KR)]]

[[Category:Joon Geol Lee of Suwon-si (KR)]]

[[Category:Sang Gab Kim of Seoul (KR)]]

LIGHT EMITTING DIODE DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18233190 titled 'LIGHT EMITTING DIODE DEVICE AND METHOD OF MANUFACTURING THE SAME

Simplified Explanation

The patent application describes a light emitting diode (LED) device with multiple light emitting areas.

  • The device includes a thin film transistor substrate, first and second diode electrodes, and a first passivation pattern.
  • There are also micro light emitting diodes on the first passivation pattern, connected to the first and second diode electrodes.
  • The micro light emitting diodes are connected using bridge patterns.
  • The sidewalls of the micro light emitting diodes and the first passivation pattern are in the same plane.


Original Abstract Submitted

A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.

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