US Patent Application 18232834. PLASMA PROCESSING APPARATUS simplified abstract

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PLASMA PROCESSING APPARATUS

Organization Name

Tokyo Electron Limited

Inventor(s)

Toshimasa Kobayashi of Miyagi (JP)

Kazuki Takahashi of Miyagi (JP)

PLASMA PROCESSING APPARATUS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18232834 titled 'PLASMA PROCESSING APPARATUS

Simplified Explanation

The patent application describes a plasma processing apparatus that is used for performing a plasma process on a substrate.

  • The apparatus includes a processing container where a mounting stage is provided to hold the substrate during the plasma process.
  • An exhaust passage is also included, which surrounds the mounting stage and allows the gas containing by-products from the plasma process to flow out.
  • The apparatus further includes a first adsorption member, which is positioned along the inner wall surface of the exhaust passage.
  • The surface of the first adsorption member is roughened to enhance its ability to adsorb the by-products released during the plasma process.


Original Abstract Submitted

A plasma processing apparatus includes: a processing container in which a mounting stage mounted with a substrate is provided and a plasma process is performed on the substrate; an exhaust passage which is provided around the mounting stage and through which a gas containing a by-product released by the plasma process flows; and a first adsorption member which is arranged along an inner wall surface of the exhaust passage and of which a surface is roughened to adsorb the by-product.