US Patent Application 18232722. Liner-Free Conductive Structures With Anchor Points simplified abstract
Contents
Liner-Free Conductive Structures With Anchor Points
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Sung-Li Wang of Zhubei City (TW)
Shuen-Shin Liang of Hsinchu (TW)
Chia-Hung Chu of Taipei City (TW)
Liner-Free Conductive Structures With Anchor Points - A simplified explanation of the abstract
This abstract first appeared for US patent application 18232722 titled 'Liner-Free Conductive Structures With Anchor Points
Simplified Explanation
- The patent application describes a method for creating conductive structures without the need for a liner or barrier layer. - The method involves depositing an etch stop layer on a cobalt contact on a substrate. - A dielectric layer is then deposited on top of the etch stop layer. - The dielectric and etch stop layers are etched to create an opening that exposes the top surface of the cobalt contact. - The exposed top surface of the cobalt contact is etched to create a recess that extends under the etch stop layer. - A ruthenium metal is deposited to fill the recess and the opening. - The ruthenium metal is annealed to form an oxide layer between the ruthenium metal and the dielectric.
Original Abstract Submitted
The present disclosure describes a method for forming liner-free or barrier-free conductive structures. The method includes depositing an etch stop layer on a cobalt contact disposed on a substrate, depositing a dielectric on the etch stop layer, etching the dielectric and the etch stop layer to form an opening that exposes a top surface of the cobalt contact, and etching the exposed top surface of the cobalt contact to form a recess in the cobalt contact extending laterally under the etch stop layer. The method further includes depositing a ruthenium metal to substantially fill the recess and the opening, and annealing the ruthenium metal to form an oxide layer between the ruthenium metal and the dielectric.
