US Patent Application 18232523. SEMICONDUCTOR PACKAGE DIELECTRIC SUSBTRATE INCLUDING A TRENCH simplified abstract

SEMICONDUCTOR PACKAGE DIELECTRIC SUSBTRATE INCLUDING A TRENCH

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Yueh-Ting Lin of Taipei City (TW)]]

[[Category:Hua-Wei Tseng of New Taipei City (TW)]]

[[Category:Ming Shih Yeh of Zhubei City (TW)]]

[[Category:Der-Chyang Yeh of Hsin-Chu (TW)]]

SEMICONDUCTOR PACKAGE DIELECTRIC SUSBTRATE INCLUDING A TRENCH - A simplified explanation of the abstract

This abstract first appeared for US patent application 18232523 titled 'SEMICONDUCTOR PACKAGE DIELECTRIC SUSBTRATE INCLUDING A TRENCH

Simplified Explanation

The patent application describes a package that includes a device die and a redistribution line (RDL) structure.

• The RDL structure is made up of multiple layers of dielectric material and RDLs.
• The device die is bonded to the RDL structure.
• Trenches are created near the edges of the RDL structure through each layer of dielectric material.
• These trenches help protect the inner portions of the RDL structure from damage.

Original Abstract Submitted

A package comprises at least one first device die, and a redistribution line (RDL) structure having the at least one first device die bonded thereto. The RDL structure comprises a plurality of dielectric layers, and a plurality of RDLs formed through the plurality of dielectric layers. A trench is defined proximate to axial edges of the RDL structure through each of the plurality of dielectric layers. The trench prevents damage to portions of the RDL structure located axially inwards of the trench.