US Patent Application 18232421. MOLYBDENUM(0) PRECURSORS FOR DEPOSITION OF MOLYBDENUM FILMS simplified abstract

MOLYBDENUM(0) PRECURSORS FOR DEPOSITION OF MOLYBDENUM FILMS

Organization Name

Applied Materials, Inc.

Inventor(s)

Chandan Kr Barik of Singapore (SG)

John Sudijono of Singapore (SG)

Chandan Das of Singapore (SG)

Doreen Wei Ying Yong of Singapore (SG)

Mark Saly of Santa Clara CA (US)

Bhaskar Jyoti Bhuyan of San Jose CA (US)

Feng Q. Liu of San Jose CA (US)

MOLYBDENUM(0) PRECURSORS FOR DEPOSITION OF MOLYBDENUM FILMS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18232421 titled 'MOLYBDENUM(0) PRECURSORS FOR DEPOSITION OF MOLYBDENUM FILMS

Simplified Explanation

The patent application describes molybdenum(0) and coordination complexes, as well as methods for depositing molybdenum-containing films on a substrate.

• The patent application explains how to form molybdenum-containing films on a substrate using a molybdenum precursor and a reactant.
• The films can be made of various molybdenum compounds such as elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, or molybdenum nitride.
• The deposition process can be done sequentially or simultaneously, depending on the desired outcome.

Original Abstract Submitted

Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.