US Patent Application 18232329. CAPACITOR-BASED TEMPERATURE-SENSING DEVICE simplified abstract

CAPACITOR-BASED TEMPERATURE-SENSING DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Shih-Lien Linus Lu of Hsinchu (TW)

CAPACITOR-BASED TEMPERATURE-SENSING DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18232329 titled 'CAPACITOR-BASED TEMPERATURE-SENSING DEVICE

Simplified Explanation

The abstract describes a temperature-sensing device that can monitor temperature by using two capacitors with different oxide layer thicknesses. The device also includes a control logic circuit to determine if the temperature being monitored exceeds a threshold based on the breakdown of the oxide layers.

• Temperature-sensing device with a unique configuration for monitoring temperature.
• Includes two capacitors with different oxide layer thicknesses.
• Control logic circuit is used to determine if the monitored temperature exceeds a threshold.
• The breakdown of the oxide layers is used as an indicator of temperature exceeding the threshold.

Original Abstract Submitted

A temperature-sensing device configured to monitor a temperature is disclosed. The temperature-sensing device includes: a first capacitor comprising a first oxide layer with a first thickness; a second capacitor comprising a second oxide layer with a second thickness, wherein the second thickness of the second oxide layer is different from the first thickness of the first oxide layer; and a control logic circuit, coupled to the first and second capacitors, and configured to determine whether the monitored temperature is equal to or greater than a threshold temperature based on whether at least one of the first and second oxide layers breaks down.