US Patent Application 18232264. PHOTORESIST COMPOSITION AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract

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PHOTORESIST COMPOSITION AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.


Inventor(s)

An-Ren Zi of Hsinchu City (TW)

Ching-Yu Chang of Yuansun Village (TW)

PHOTORESIST COMPOSITION AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18232264 titled 'PHOTORESIST COMPOSITION AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a method for manufacturing a semiconductor device using a resist layer.

  • The resist layer is made up of a resist composition that includes a metal, a ligand, and a solvent.
  • The solvent used in the resist composition is a mixture of a first solvent and a second solvent.
  • The first solvent has a vapor pressure of at least 0.75 kPa and can be an ether, ester, alkane, aldehyde, or ketone.
  • The second solvent is different from the first solvent.
  • Alternatively, the solvent used in the resist composition can be a third solvent, which is a tertiary alcohol with a carbon chain length of C4-C14.
  • The resist layer is then patterned to create the desired semiconductor device.


Original Abstract Submitted

A method for manufacturing a semiconductor device includes forming a resist layer including a resist composition over a substrate. The resist composition includes: a metal, a ligand, and a solvent. The solvent is mixture of a first solvent having a vapor pressure of at least 0.75 kPa, wherein the first solvent is one or more of an ether, an ester, an alkane, an aldehyde, or a ketone, and a second solvent different from the first solvent. Alternatively, the solvent is a third solvent, wherein the third solvent is a C4-C14 tertiary alcohol. The resist layer is patterned.

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