US Patent Application 18232225. PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN simplified abstract

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PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.


Inventor(s)

An-Ren Zi of Hsinchu City (TW)

Ching-Yu Chang of Yuansun Village (TW)

PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN - A simplified explanation of the abstract

This abstract first appeared for US patent application 18232225 titled 'PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN

Simplified Explanation

The patent application describes a method for creating a photoresist pattern using a special photoresist composition.

  • The photoresist composition includes metal particles and a thermally stable ligand attached to the metal particles.
  • The thermally stable ligand contains specific types of alkyl or fluoroalkyl groups.
  • The photoresist layer is applied over a substrate and then selectively exposed to actinic radiation.
  • The photoresist layer is developed to create a pattern in the photoresist layer.
  • In one embodiment, the photoresist layer is heated before being exposed to actinic radiation.


Original Abstract Submitted

A method of forming a photoresist pattern includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist composition includes metal particles and a thermally stable ligand attached to the metal particles. The thermally stable ligand includes branched or unbranched, cyclic or non-cyclic, C1-C7 alkyl groups or C1-C7 fluoroalkyl groups. The C1-C7 alkyl or C1-C7 fluoroalkyl groups include one or more of —CF, —SH, —OH, ═O, —S—, —P—, —PO, —C(═O)SH, —C(═O)OH, —C(═O)O—, —O—, —N—, —C(═O)NH, —SOOH, —SOSH, —SOH, or —SO—. The photoresist layer is selectively exposed to actinic radiation, and the photoresist layer is developed to form a pattern in the photoresist layer. In an embodiment, the method includes heating the photoresist layer before selectively exposing the photoresist layer to actinic radiation.

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