US Patent Application 18232200. Through-Circuit Vias In Interconnect Structures simplified abstract

Through-Circuit Vias In Interconnect Structures

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Jian-Hong Lin of Yunlin 632 (TW)

Hsin-Chun Chang of Taipei (TW)

Ming-Hong Hsieh of Bade City (TW)

Ming-Yih Wang of Hsin-Chu (TW)

Yinlung Lu of Hsinchu City (TW)

Through-Circuit Vias In Interconnect Structures - A simplified explanation of the abstract

This abstract first appeared for US patent application 18232200 titled 'Through-Circuit Vias In Interconnect Structures

Simplified Explanation

The abstract describes an integrated circuit (IC) with through-circuit vias (TCVs) and methods of forming the same.

• The IC includes a semiconductor device and interconnect structures on its surfaces.
• It also includes inter-layer dielectric (ILD) layers on the front and back surfaces of the substrate.
• The TCV is a conductive pathway that goes through the interconnect structures, ILD layers, and substrate.
• The TCV is separated from the semiconductor device by a portion of the substrate and portions of the ILD layers.
• One end of the TCV is connected to a conductive line in the first interconnect structure, while the other end is connected to a conductive line in the second interconnect structure.

Original Abstract Submitted

An integrated circuit (IC) with through-circuit vias (TCVs) and methods of forming the same are disclosed. The IC includes a semiconductor device, first and second interconnect structures disposed on first and second surfaces of the semiconductor device, respectively, first and second inter-layer dielectric (ILD) layers disposed on front and back surfaces of the substrate, respectively, and a TCV disposed within the first and second interconnect structures, the first and second ILD layers, and the substrate. The TCV is spaced apart from the semiconductor device by a portion of the substrate and portions of the first and second ILD layers. A first end of the TCV, disposed over the front surface of the substrate, is connected to a conductive line of the first interconnect structure and a second end of the TCV, disposed over the back surface of the substrate, is connected to a conductive line of the second interconnect structure.