US Patent Application 18231740. SYSTEM AND METHOD FOR PARTICLE CONTROL IN MRAM PROCESSING simplified abstract
Contents
SYSTEM AND METHOD FOR PARTICLE CONTROL IN MRAM PROCESSING
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Tsung-Han Kuo of New Taipei City (TW)
Po-Shu Wang of Hsinchu County (TW)
Wei-Ming Wang of Hsinchu County (TW)
SYSTEM AND METHOD FOR PARTICLE CONTROL IN MRAM PROCESSING - A simplified explanation of the abstract
This abstract first appeared for US patent application 18231740 titled 'SYSTEM AND METHOD FOR PARTICLE CONTROL IN MRAM PROCESSING
Simplified Explanation
- The patent application describes a system and method for reducing particle contamination on substrates during a deposition process. - The system includes a processing chamber that can be sealed to create a pressurized environment, and it contains a plasma, a target, and a substrate. - A particle control unit is also included in the system, which is designed to provide an external force to charged atoms and contamination particles in the plasma. - The charged atoms and contamination particles are generated by the target when it comes into direct contact with the plasma. - The external force exerted by the particle control unit is intended to direct the charged atoms towards the top surface of the substrate, while directing the contamination particles away from the top surface of the substrate. - The purpose of this system and method is to minimize particle contamination on the substrate during the deposition process, which can improve the quality and reliability of the deposited film.
Original Abstract Submitted
A system and method for reducing particle contamination on substrates during a deposition process using a particle control system is disclosed here. In one embodiment, a film deposition system includes: a processing chamber sealable to create a pressurized environment and configured to contain a plasma, a target and a substrate in the pressurized environment; and a particle control unit, wherein the particle control unit is configured to provide an external force to each of at least one charged atom and at least one contamination particle in the plasma, wherein the at least one charged atom and the at last one contamination particle are generated by the target when it is in direct contact with the plasma, wherein the external force is configured to direct the at least one charged atom to a top surface of the substrate and to direct the at least one contamination particle away from the top surface of the substrate.
