US Patent Application 18231278. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract

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SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

Organization Name

Tokyo Electron Limited

Inventor(s)

Satoru Nakamura of Miyagi (JP)

Shinya Morikita of Miyagi (JP)

Fumiya Tanifuji of Miyagi (JP)

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18231278 titled 'SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

Simplified Explanation

The patent application describes a method for processing a substrate using a substrate processing apparatus.

  • The method involves supplying a process gas containing fluorocarbon and a rare gas to a processing container.
  • A processing target object, which includes a first region made of silicon oxide, is placed on a pedestal within the processing container.
  • The processing target object is then plasma-processed using a first plasma generated from the process gas under specific conditions.
  • The processing target object is further plasma-processed with a bias potential generated by a second plasma of the process gas, under different conditions from the first plasma generation.
  • Steps b) and c) are repeated in a cycle.


Original Abstract Submitted

A substrate processing method is a substrate processing method for a substrate processing apparatus. The method includes: a) supplying a process gas containing fluorocarbon and a rare gas to a processing container in which a placing pedestal for placing a processing target object including a first region made of silicon oxide is arranged; b) plasma-processing the processing target object by a first plasma of the process gas generated under a first plasma generation condition; c) plasma-processing the processing target object in which a bias potential is generated on the processing target object by a second plasma of the process gas generated under a second plasma generation condition different from the first plasma generation condition; and d) repeating the b) and the c).

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