US Patent Application 18231254. METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE WITH BONDING STRUCTURE simplified abstract

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METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE WITH BONDING STRUCTURE

Organization Name

NANYA TECHNOLOGY CORPORATION

Inventor(s)

TZU-CHING Tsai of TAIPEI CITY (TW)

METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE WITH BONDING STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18231254 titled 'METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE WITH BONDING STRUCTURE

Simplified Explanation

The patent application describes a circuit device with two substrates and barrier layers made of aluminum fluoride.

  • The circuit device includes a first substrate with a first barrier layer and a second substrate with a second barrier layer.
  • There are two conductive portions, one on each substrate, and they are covered by expanding pads.
  • The first expanding pad is on the first conductive portion and has a larger contact area than the conductive portion.
  • The second expanding pad is bonded to the first expanding pad and is on the second conductive portion, also with a larger contact area.
  • The purpose of the expanding pads is to provide a larger contact area for improved connectivity.
  • The use of aluminum fluoride in the barrier layers enhances the performance and durability of the circuit device.


Original Abstract Submitted

A circuit device includes: a first substrate having a first barrier layer; a second substrate having a second barrier layer; a first conductive portion arranged over the first barrier layer; a second conductive portion arranged over the second barrier layer; a first expanding pad arranged on the first conductive portion and including a first contact area greater than that of the first conductive portion; and a second expanding pad bonded to the first expanding pad, arranged on the second conductive portion and including a second expanded contact area greater than that of the second conductive portion. The first barrier layer and the second barrier layer include aluminum fluoride.

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