US Patent Application 18231173. EUV WAFER DEFECT IMPROVEMENT AND METHOD OF COLLECTING NONCONDUCTIVE PARTICLES simplified abstract

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EUV WAFER DEFECT IMPROVEMENT AND METHOD OF COLLECTING NONCONDUCTIVE PARTICLES

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Tao-Hsin Chen of Tainan (TW)

Li-Jui Chen of Hsinchu City (TW)

Chia-Yu Lee of Hsinchu (TW)

EUV WAFER DEFECT IMPROVEMENT AND METHOD OF COLLECTING NONCONDUCTIVE PARTICLES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18231173 titled 'EUV WAFER DEFECT IMPROVEMENT AND METHOD OF COLLECTING NONCONDUCTIVE PARTICLES

Simplified Explanation

The patent application describes a lithographic apparatus used for extreme ultraviolet (EUV) lithography.

  • The apparatus includes a wafer stage and a particle removing assembly.
  • The wafer stage has a measurement side and an exposure side.
  • The particle removing assembly includes electrodes, an exhaust device, and turbomolecular pumps.
  • The electrodes are designed to direct debris from the chamber and allow it to be exhausted from the wafer stage.
  • In some cases, the turbomolecular pumps are turned off on the measurement side to guide the exhaust flow to the exposure side.
  • The speed of voltage rise to the electrodes of the wafer chuck can be adjusted.


Original Abstract Submitted

An EUV lithographic apparatus includes a wafer stage and a particle removing assembly for cleaning a wafer for an extreme ultraviolet (EUV) lithographic apparatus. The wafer stage includes a measurement side and an exposure side. The particle removing assembly includes particle removing electrodes, an exhaust device and turbomolecular pumps. The particle removing electrodes is configured to direct debris from the chamber by suppressing turbulence such that the debris can be exhausted from the wafer stage to the outside of the processing apparatus. In some embodiments, turbomolecular pumps are turned off in the measurement side of the wafer stage so that an exhaust flow can be guided to an exposure side of the wafer stage. In some embodiments, the speed of voltage rise to the electrodes of the wafer chuck is adjusted.

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