US Patent Application 18231170. DEVICE AND METHOD TO REMOVE DEBRIS FROM AN EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY SYSTEM simplified abstract
DEVICE AND METHOD TO REMOVE DEBRIS FROM AN EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY SYSTEM
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Chieh Hsieh of Taoyuan City (TW)
Sheng-Kang Yu of Hsinchu City (TW)
Shang-Chieh Chien of New Taipei City (TW)
Heng-Hsin Liu of New Taipei City (TW)
Li-Jui Chen of Hsinchu City (TW)
DEVICE AND METHOD TO REMOVE DEBRIS FROM AN EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY SYSTEM - A simplified explanation of the abstract
This abstract first appeared for US patent application 18231170 titled 'DEVICE AND METHOD TO REMOVE DEBRIS FROM AN EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY SYSTEM
Simplified Explanation
The patent application describes a method for removing debris from an extreme ultraviolet (EUV) lithography system using laser irradiation. The method involves selectively vaporizing the debris with controlled laser parameters to minimize damage to the system and then removing the vaporized debris.
- The method involves using laser irradiation to remove debris from an EUV lithography system.
- The laser parameters, such as wavelength and power, are controlled to selectively vaporize the debris.
- The goal is to limit damage to the EUV lithography system during the debris removal process.
- The vaporized debris is then removed from the system.
Original Abstract Submitted
A method includes irradiating debris deposited in an extreme ultraviolet (EUV) lithography system with laser, controlling one or more of a wavelength of the laser or power of the laser to selectively vaporize the debris and limit damage to the EUV) lithography system, and removing the vaporized debris.
