US Patent Application 18231165. DEVICE FOR ADJUSTING POSITION OF CHAMBER AND PLASMA PROCESS CHAMBER INCLUDING THE SAME FOR SEMICONDUCTOR MANUFACTURING simplified abstract

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DEVICE FOR ADJUSTING POSITION OF CHAMBER AND PLASMA PROCESS CHAMBER INCLUDING THE SAME FOR SEMICONDUCTOR MANUFACTURING

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Ming Che Chen of Hsinchu (TW)]]

[[Category:Wei-Chen Liao of Guosing Township (TW)]]

DEVICE FOR ADJUSTING POSITION OF CHAMBER AND PLASMA PROCESS CHAMBER INCLUDING THE SAME FOR SEMICONDUCTOR MANUFACTURING - A simplified explanation of the abstract

This abstract first appeared for US patent application 18231165 titled 'DEVICE FOR ADJUSTING POSITION OF CHAMBER AND PLASMA PROCESS CHAMBER INCLUDING THE SAME FOR SEMICONDUCTOR MANUFACTURING

Simplified Explanation

- The patent application describes a device designed for a plasma processing chamber. - The device consists of a base and an upper portion attached to the base, extending in a transverse direction. - The base has one or more first through holes that align with openings in the plasma processing chamber, allowing the device to be attached. - The upper portion of the device has a second through hole, which contains a gauge. - The gauge is used to measure and record the position of the plasma processing chamber. - The gauge is also capable of detecting any shifts or changes in the position of the plasma processing chamber. - The purpose of this device is to provide a means of accurately monitoring and recording the position of the plasma processing chamber during operation.


Original Abstract Submitted

A device for a plasma processing chamber includes a base, an upper portion attached to the base and extending transverse to the base, and one or more first through holes defined in the base. The one or more first through holes correspond to one or more openings defined in the plasma processing chamber for attaching the device. The device further includes a second through hole defined in the upper portion, and a gauge located in the second through hole, the gauge configured for recording a position of the plasma processing chamber and a shift in the position of the plasma processing chamber.

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