US Patent Application 18230829. Method of Forming Semiconductor Packages Having Through Package Vias simplified abstract

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Method of Forming Semiconductor Packages Having Through Package Vias

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Chen-Hua Yu of Hsinchu (TW)

Chung-Shi Liu of Hsinchu (TW)

Chih-Wei Lin of Zhubei City (TW)

Ming-Da Cheng of Jhubei City (TW)

Method of Forming Semiconductor Packages Having Through Package Vias - A simplified explanation of the abstract

This abstract first appeared for US patent application 18230829 titled 'Method of Forming Semiconductor Packages Having Through Package Vias

Simplified Explanation

- The patent application describes a semiconductor device and a method for forming the device. - The device includes an integrated circuit with through vias located next to the integrated circuit die. - A molding compound is placed between the integrated circuit die and the through vias. - The through vias have a projection that extends through a patterned layer. - The through vias may be offset from the surface of the patterned layer. - The recess in the through vias is created by selectively removing a seed layer used to form them.


Original Abstract Submitted

A semiconductor device and method for forming the semiconductor device is provided. The semiconductor device includes an integrated circuit having through vias adjacent to the integrated circuit die, wherein a molding compound is interposed between the integrated circuit die and the through vias. The through vias have a projection extending through a patterned layer, and the through vias may be offset from a surface of the patterned layer. The recess may be formed by selectively removing a seed layer used to form the through vias.