US Patent Application 18230367. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES simplified abstract
Contents
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Li-Chao Yin of Hsinchu City (TW)
Hsin-Hsien Wu of Hsinchu City (TW)
Chih-Ming Ke of Hsinchu City (TW)
Chyi Shyuan Chern of Taipei (TW)
Ming-Hua Lo of Hsinchu City (TW)
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18230367 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES
Simplified Explanation
The patent application describes a method for preparing a structure with two or more materials that have different coefficients of thermal expansion. This structure is then subjected to a cryogenic treatment.
- The method involves creating a structure with multiple materials that have different coefficients of thermal expansion.
- The structure may include a semiconductor wafer.
- One or more layers are formed on the semiconductor wafer.
- The structure is then subjected to a cryogenic treatment.
- The cryogenic treatment helps to enhance the properties and performance of the structure.
- This method can be useful in various applications, such as semiconductor manufacturing or other industries where materials with different coefficients of thermal expansion need to be combined.
Original Abstract Submitted
In a method, a structure including two or more materials having different coefficients of thermal expansion is prepared, and the structure is subjected to a cryogenic treatment. In one or more of the foregoing and following embodiments, the structure includes a semiconductor wafer and one or more layers are formed on the semiconductor wafer.
