US Patent Application 18230135. SEMICONDUCTOR DIE INCLUDING THROUGH SUBSTRATE VIA BARRIER STRUCTURE AND METHODS FOR FORMING THE SAME simplified abstract

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR DIE INCLUDING THROUGH SUBSTRATE VIA BARRIER STRUCTURE AND METHODS FOR FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company Limited

Inventor(s)

Jen-Yuan Chang of Hsinchu City (TW)

Chia-Ping Lai of Hsinchu City (TW)

Shih-Chang Chen of Hsinchu (TW)

Tzu-Chung Tsai of Hsinchu (TW)

Chien-Chang Lee of Miaoli County (TW)

SEMICONDUCTOR DIE INCLUDING THROUGH SUBSTRATE VIA BARRIER STRUCTURE AND METHODS FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18230135 titled 'SEMICONDUCTOR DIE INCLUDING THROUGH SUBSTRATE VIA BARRIER STRUCTURE AND METHODS FOR FORMING THE SAME

Simplified Explanation

The patent application describes a die, which is a semiconductor device.

  • The die includes a semiconductor substrate with a front side and a back side.
  • There is a dielectric structure on the front side of the substrate, consisting of a substrate oxide layer and interlayer dielectric (ILD) layers.
  • An interconnect structure is present within the dielectric structure.
  • A through-silicon via (TSV) structure extends vertically from the back side of the substrate to the front side, with one end in the interconnect structure.
  • A TSV barrier structure is included, which consists of a barrier line that contacts the end of the TSV structure and a seal ring in the substrate oxide layer surrounding the TSV structure horizontally.


Original Abstract Submitted

A die includes: a semiconductor substrate having a front side and an opposing back side; a dielectric structure including a substrate oxide layer disposed on the front side of the semiconductor substrate and interlayer dielectric (ILD) layers disposed on the substrate oxide layer; an interconnect structure disposed in the dielectric structure; a through-silicon via (TSV) structure extending in a vertical direction from the back side of the semiconductor substrate through the front side of the semiconductor substrate, such that a first end of the TSV structure is disposed in the interconnect structure; and a TSV barrier structure including a barrier line that contacts the first end of the TSV structure, and a first seal ring disposed in the substrate oxide layer and that surrounds the TSV structure in a lateral direction perpendicular to the vertical direction.

Retrieved from "http://wikipatents.org/index.php?title=US_Patent_Application_18230135._SEMICONDUCTOR_DIE_INCLUDING_THROUGH_SUBSTRATE_VIA_BARRIER_STRUCTURE_AND_METHODS_FOR_FORMING_THE_SAME_simplified_abstract&oldid=11676"