US Patent Application 18230062. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Ming-Hui Weng of New Taipei City (TW)

Chen-Yu Liu of Kaohsiung City (TW)

Chih-Cheng Liu of Hsinchu (TW)

Yi-Chen Kuo of Taichung (TW)

Jia-Lin Wei of Hsinchu (TW)

Yen-Yu Chen of Taipei (TW)

Jr-Hung Li of Chupei City (TW)

Yahru Cheng of Taipei (TW)

Chi-Ming Yang of Hsinchu City (TW)

Tze-Liang Lee of Hsinchu (TW)

Ching-Yu Chang of Yilang County (TW)

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18230062 titled 'METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a method of manufacturing a semiconductor device using a photoresist layer.

• The photoresist layer is formed by combining two precursors in a vapor state and depositing the resulting material onto a substrate.
• A protective layer is then applied over the photoresist layer.
• The photoresist layer is selectively exposed to actinic radiation through the protective layer, creating a latent pattern.
• The protective layer is removed, and a developer is applied to the selectively exposed photoresist layer to develop the latent pattern and form a pattern on the substrate.

Original Abstract Submitted

A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.