US Patent Application 18230020. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES simplified abstract
Contents
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Chandrashekhar Prakash Savant of Hsinchu (TW)
Chia-Ming Tsai of Zhubei City (TW)
Ming-Te Chen of Hsinchu City (TW)
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18230020 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES
Simplified Explanation
The patent application describes a semiconductor device with a gate structure and a source/drain region.
- The gate structure includes multiple layers such as a gate dielectric layer, a work function adjustment layer, a shield layer, a barrier layer, and a metal gate electrode layer.
- The work function adjustment layer is made of aluminum and helps adjust the electrical properties of the device.
- The shield layer can be made of various materials including metals, metal nitrides, metal carbides, silicides, or layers containing specific elements like F, Ga, In, Zr, Mn, and Sn.
- An aluminum-containing layer with lower aluminum concentration than the work function adjustment layer is also included in the gate structure.
- The combination of these layers improves the performance and functionality of the semiconductor device.
Original Abstract Submitted
A semiconductor device includes a gate structure disposed over a channel region, and a source/drain region. The gate structure includes a gate dielectric layer over the channel region, a first work function adjustment layer, over the gate dielectric layer, a first shield layer over the first work function adjustment layer, a first barrier layer, and a metal gate electrode layer. The first work function adjustment layer is made up of n-type work function adjustment layer and includes aluminum. The first shield layer is made of at least one selected from the group consisting of metal, metal nitride, metal carbide, silicide, a layer containing one or more of F, Ga, In, Zr, Mn and Sn, and an aluminum containing layer having a lower aluminum concentration than the first work function adjustment layer.
