US Patent Application 18224487. SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Shun-Jang Liao of Hsinchu (TW)
Chia-Chun Liao of Hsinchu (TW)
Shih-Hsun Chang of Hsinchu (TW)
SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18224487 titled 'SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
Simplified Explanation
The patent application describes a semiconductor device that includes two types of field effect transistors (FETs) with different threshold voltages. The device has a first-type-channel FET with a smaller threshold voltage than a second first-type-channel FET.
- The semiconductor device includes first-type-channel FETs with different threshold voltages.
- The first-type-channel FETs have different gate structures, with the first FET having a first gate structure and the second FET having a second gate structure.
- The first gate structure includes a first work function adjustment material (WFM) layer, while the second gate structure includes a second WFM layer.
- The thickness and material of the WFM layers may be different from each other.
Original Abstract Submitted
A semiconductor device includes first-type-channel field effect transistors (FETs) including a first first-type-channel FET including a first gate structure and a second first-type-channel FET including a second gate structure. The first first-type-channel FET has a smaller threshold voltage than the second first-type-channel FET. The first gate structure includes a first work function adjustment material (WFM) layer and the second gate structure includes a second WFM layer. At least one of thickness and material of the first and second WFM layers is different from each other.
