US Patent Application 18224000. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
Contents
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Sai-Hooi Yeong of Hsinchu (TW)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18224000 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The patent application describes a method of manufacturing a semiconductor device.
- The method involves forming an interlayer dielectric (ILD) layer over an underlying structure.
- The underlying structure includes a gate structure and a first source/drain epitaxial layer.
- A first opening is formed over the first source/drain epitaxial layer by etching a part of the ILD layer and the upper portion of the first source/drain epitaxial layer.
- A second source/drain epitaxial layer is then formed over the etched first source/drain epitaxial layer.
- Finally, a conductive material is formed over the second source/drain epitaxial layer.
Original Abstract Submitted
In in a method of manufacturing a semiconductor device, an interlayer dielectric (ILD) layer is formed over an underlying structure. The underlying structure includes a gate structure disposed over a channel region of a fin structure, and a first source/drain epitaxial layer disposed at a source/drain region of the fin structure. A first opening is formed over the first source/drain epitaxial layer by etching a part of the ILD layer and an upper portion of the first source/drain epitaxial layer. A second source/drain epitaxial layer is formed over the etched first source/drain epitaxial layer. A conductive material is formed over the second source/drain epitaxial layer.
