US Patent Application 18222344. MULTIFUNCTIONAL COLLIMATOR FOR CONTACT IMAGE SENSORS simplified abstract
Contents
MULTIFUNCTIONAL COLLIMATOR FOR CONTACT IMAGE SENSORS
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Hsin-Yu Chen of Hsinchu City (TW)
Chun-Peng Li of Hsinchu City (TW)
Chia-Chun Hung of Hsinchu-City (TW)
Ching-Hsiang Hu of Taipei City (TW)
Wei-Ding Wu of Zhubei City (TW)
Jui-Chun Weng of Taipei City (TW)
JI-Hong Chiang of Changhua City (TW)
Yen-Chiang Liu of Hsinchu City (TW)
Jiun-Jie Chiou of Hsinchu-City (TW)
Li-Yang Tu of Hsinchu City (TW)
Jia-Syuan Li of Hsinchu City (TW)
You-Cheng Jhang of Hsinchu City (TW)
Shin-Hua Chen of Hsinchu City (TW)
Lavanya Sanagavarapu of Hsinchu City (TW)
Hsi-Cheng Hsu of Taichung City (TW)
MULTIFUNCTIONAL COLLIMATOR FOR CONTACT IMAGE SENSORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18222344 titled 'MULTIFUNCTIONAL COLLIMATOR FOR CONTACT IMAGE SENSORS
Simplified Explanation
The patent application describes a method for creating a multifunctional collimator structure using a dielectric layer and a substrate.
- The collimator includes a dielectric layer formed over a substrate.
- The dielectric layer has a plurality of via holes arranged in an array along a lateral direction of the first surface.
- Each via hole extends through the dielectric layer and the substrate from the first surface to the second surface in a vertical direction.
- The substrate has a high impurity doping concentration and a specific thickness to enable the collimator to filter light in a range of wavelengths.
Original Abstract Submitted
Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×10per cubic centimeter (cm) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.
