US Patent Application 18220327. SEMICONDUCTOR DEVICES simplified abstract
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Gyuhyun Kil of Hwaseong-si (KR)
Junghoon Han of Hwaseong-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18220327 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The patent application describes a semiconductor device with two trenches in different regions of a substrate.
- The device includes isolation structures made up of oxide patterns, liners, and insulation patterns stacked in the trenches.
- There are also gate structures made up of high-k dielectric patterns and metal patterns stacked on the regions.
- The liners protrude above the oxide patterns and insulation patterns in the trenches.
Original Abstract Submitted
A semiconductor device includes first and second trenches in respective first and second regions in a substrate, a first isolation structure having a first inner wall oxide pattern, a first liner, and a first filling insulation pattern sequentially stacked I the first trench, a second isolation structure having a second inner wall oxide pattern, a second liner, and a second filling insulation pattern sequentially stacked I the second trench, a first gate structure having a first high-k dielectric pattern, a first P-type metal pattern, and a first N-type metal pattern sequentially stacked on the first region, and a second gate structure having a second high-k dielectric pattern and a second N-type metal pattern sequentially stacked on the second region, wherein the first and second liners protrude above upper surfaces of the first and second inner wall oxide patterns and the first and second filling insulation patterns, respectively.
