US Patent Application 18219525. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Kyoung-Ho Jung of Suwon-si (KR)
Yongsu Kim of Seongnam-si (KR)
Moonyoung Jeong of Suwon-si (KR)
Gyeongsu Park of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18219525 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The patent application describes a semiconductor device and a method of manufacturing it. The semiconductor device includes a substrate with a trench, a gate electrode placed in the trench, and a gate insulating film between the substrate and the gate electrode. The gate electrode consists of a gate conductor and a metal element, and the effective work function of the gate electrode is lower than that of the gate conductor.
Bullet points explaining the patent/innovation:
- The patent application presents a new semiconductor device and manufacturing method. - The device includes a substrate with a trench, a gate electrode, and a gate insulating film. - The gate electrode is made up of a gate conductor and a metal element. - The effective work function of the gate electrode is lower than that of the gate conductor. - This design allows for improved performance and functionality of the semiconductor device. - The method of manufacturing the device involves precise deposition and formation techniques. - The gate insulating film ensures proper insulation between the substrate and the gate electrode. - The use of a metal element in the gate electrode enhances the device's electrical properties. - The lower effective work function of the gate electrode contributes to the device's overall efficiency. - This innovation can potentially lead to advancements in semiconductor technology.
Original Abstract Submitted
A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.
