US Patent Application 18219086. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Li-Zhen Yu of New Taipei City (TW)
Chia-Hao Chang of Hsinchu (TW)
Cheng-Chi Chuang of New Taipei City (TW)
Kuan-Lun Cheng of Hsinchu (TW)
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18219086 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Simplified Explanation
The patent application describes a semiconductor device structure and methods of forming it.
- The structure includes a device and a first conductive structure placed over it.
- The first conductive structure has a first sidewall with two portions.
- A first spacer layer is placed on the first portion of the first sidewall.
- A second conductive structure is placed adjacent to the first conductive structure.
- The second conductive structure has a second sidewall with two portions.
- A second spacer layer is placed on the third portion of the second sidewall.
- An air gap is formed between the first and second conductive structures.
- The second portion of the first sidewall, the first spacer layer, the fourth portion of the second sidewall, and the second spacer layer are exposed to the air gap.
Original Abstract Submitted
A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a device, a first conductive structure disposed over the device, and the first conductive structure includes a first sidewall having a first portion and a second portion. The semiconductor device structure further includes a first spacer layer disposed on the first portion, a second conductive structure disposed adjacent the first conductive structure, and the second conductive structure includes a second sidewall having a third portion and a fourth portion. The semiconductor device structure further includes a second spacer layer disposed on the third portion, and an air gap is formed between the first conductive structure and the second conductive structure. The second portion, the first spacer layer, the fourth portion, and the second spacer layer are exposed to the air gap.
