US Patent Application 18218871. IMAGING ELEMENT, STACKED-TYPE IMAGING ELEMENT, AND SOLID-STATE IMAGING APPARATUS simplified abstract
IMAGING ELEMENT, STACKED-TYPE IMAGING ELEMENT, AND SOLID-STATE IMAGING APPARATUS
Organization Name
Inventor(s)
Toshiki Moriwaki of Kanagawa (JP)
IMAGING ELEMENT, STACKED-TYPE IMAGING ELEMENT, AND SOLID-STATE IMAGING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18218871 titled 'IMAGING ELEMENT, STACKED-TYPE IMAGING ELEMENT, AND SOLID-STATE IMAGING APPARATUS
Simplified Explanation
The patent application describes an imaging element that includes a photoelectric conversion section with a first electrode, a photoelectric conversion layer, and a second electrode stacked on top of each other.
- The imaging element includes an inorganic oxide semiconductor material layer between the first electrode and the photoelectric conversion layer.
- The inorganic oxide semiconductor material layer consists of indium (In) atoms, gallium (Ga) atoms, tin (Sn) atoms, and zinc (Zn) atoms.
Original Abstract Submitted
An imaging element includes a photoelectric conversion section that includes a first electrode, a photoelectric conversion layer, and a second electrode stacked on one another. An inorganic oxide semiconductor material layer is formed between the first electrode and the photoelectric conversion layer. The inorganic oxide semiconductor material layer includes indium (In) atoms, gallium (Ga) atoms, tin (Sn) atoms, and zinc (Zn) atoms.
