US Patent Application 18216563. INTEGRATED CIRCUIT STRUCTURES WITH SOURCE OR DRAIN DOPANT DIFFUSION BLOCKING LAYERS simplified abstract
INTEGRATED CIRCUIT STRUCTURES WITH SOURCE OR DRAIN DOPANT DIFFUSION BLOCKING LAYERS
Organization Name
Inventor(s)
Cory Bomberger of Portland OR (US)
Anand Murthy of Portland OR (US)
Anupama Bowonder of Portland OR (US)
Aaron Budrevich of Portland OR (US)
Tahir Ghani of Portland OR (US)
INTEGRATED CIRCUIT STRUCTURES WITH SOURCE OR DRAIN DOPANT DIFFUSION BLOCKING LAYERS - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18216563 Titled 'INTEGRATED CIRCUIT STRUCTURES WITH SOURCE OR DRAIN DOPANT DIFFUSION BLOCKING LAYERS'
Simplified Explanation
This abstract describes integrated circuit structures that have source or drain dopant diffusion blocking layers. These structures include a fin made of silicon, a gate structure over the channel region of the fin, and source or drain structures on either side of the gate structure. The source or drain structures consist of two semiconductor layers - a first layer in contact with the fin's channel region and a second layer on top of the first layer. The first layer has a higher concentration of germanium than the second layer, and the second layer contains boron dopant impurity atoms. These structures help prevent the diffusion of dopant atoms from the source or drain regions into the channel region, improving the performance and reliability of the integrated circuits.
Original Abstract Submitted
Embodiments of the disclosure include integrated circuit structures having source or drain dopant diffusion blocking layers. In an example, an integrated circuit structure includes a fin including silicon. A gate structure is over a channel region of the fin, the gate structure having a first side opposite a second side. A first source or drain structure is at the first side of the gate structure. A second source or drain structure is at the second side of the gate structure. The first and second source or drain structures include a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is in contact with the channel region of the fin, and the second semiconductor layer is on the first semiconductor layer. The first semiconductor layer has a greater concentration of germanium than the second semiconductor layer, and the second semiconductor layer includes boron dopant impurity atoms.
